Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

We investigated the design and growth of compositionally graded InGaN multiplequantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the opt...

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Bibliographic Details
Main Authors: Pawan Mishra, Bilal Janjua, Tien Khee Ng, Chao Shen, Abdelmajid Salhi, Ahmed Y. Alyamani, Munir M. El-Desouki, Boon S. Ooi
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Photonics Journal
Subjects:
Compositional grading
Light emitting diodes (LEDs)
polarization field
semiconductor quantum well
solid state lighting
wavefunction overlap
Online Access:https://ieeexplore.ieee.org/document/7102690/

Internet

https://ieeexplore.ieee.org/document/7102690/

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