Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
We investigated the design and growth of compositionally graded InGaN multiplequantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the opt...
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IEEE
2015-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7102690/ |
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| author | Pawan Mishra Bilal Janjua Tien Khee Ng Chao Shen Abdelmajid Salhi Ahmed Y. Alyamani Munir M. El-Desouki Boon S. Ooi |
| author_facet | Pawan Mishra Bilal Janjua Tien Khee Ng Chao Shen Abdelmajid Salhi Ahmed Y. Alyamani Munir M. El-Desouki Boon S. Ooi |
| author_sort | Pawan Mishra |
| collection | DOAJ |
| description | We investigated the design and growth of compositionally graded InGaN multiplequantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In<sub>0→x</sub>Ga<sub>1→(1-x)</sub>N/In<sub>x</sub>Ga<sub>(1-x)</sub>N/In<sub>x→0</sub>Ga<sub>(1-x)→1</sub>N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2, respectively. The extended threshold current density rollover (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation. |
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| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-16T17:35:55Z |
| publishDate | 2015-01-01 |
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| spelling | doaj.art-fec9f51d0e924a2694973a4427d2e3d82022-12-21T22:22:47ZengIEEEIEEE Photonics Journal1943-06552015-01-01731910.1109/JPHOT.2015.24300177102690Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDsPawan Mishra0Bilal Janjua1Tien Khee Ng2Chao Shen3Abdelmajid Salhi4Ahmed Y. Alyamani5Munir M. El-Desouki6Boon S. Ooi7Electr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi ArabiaElectr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi ArabiaElectr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi ArabiaElectr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi ArabiaNat. Center for Nanotechnol., King Abdulaziz City for Sci. & Technol. (KACST), Riyadh, Saudi ArabiaNat. Center for Nanotechnol., King Abdulaziz City for Sci. & Technol. (KACST), Riyadh, Saudi ArabiaNat. Center for Nanotechnol., King Abdulaziz City for Sci. & Technol. (KACST), Riyadh, Saudi ArabiaElectr. & Math. Sci. & Eng. Div., King Abdullah Univ. of Sci. & Technol. (KAUST), Thuwal, Saudi ArabiaWe investigated the design and growth of compositionally graded InGaN multiplequantum-well (MQW)-based light-emitting diodes (LEDs) without an electron-blocking layer. Numerical investigation showed uniform carrier distribution in the active region and higher radiative recombination rate for the optimized graded-MQW design, i.e., In<sub>0→x</sub>Ga<sub>1→(1-x)</sub>N/In<sub>x</sub>Ga<sub>(1-x)</sub>N/In<sub>x→0</sub>Ga<sub>(1-x)→1</sub>N, as compared with the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles, were numerically investigated for comparison. The stepped- and graded-MQW-LEDs were then grown using plasma-assisted molecular beam epitaxy through surface-stoichiometry optimization based on reflection high-energy electron diffraction in situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 and 275 A/cm2, respectively. The extended threshold current density rollover (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, which is consistent with the numerical simulation.https://ieeexplore.ieee.org/document/7102690/Compositional gradingLight emitting diodes (LEDs)polarization fieldsemiconductor quantum wellsolid state lightingwavefunction overlap |
| spellingShingle | Pawan Mishra Bilal Janjua Tien Khee Ng Chao Shen Abdelmajid Salhi Ahmed Y. Alyamani Munir M. El-Desouki Boon S. Ooi Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs IEEE Photonics Journal Compositional grading Light emitting diodes (LEDs) polarization field semiconductor quantum well solid state lighting wavefunction overlap |
| title | Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs |
| title_full | Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs |
| title_fullStr | Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs |
| title_full_unstemmed | Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs |
| title_short | Achieving Uniform Carrier Distribution in MBE-Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs |
| title_sort | achieving uniform carrier distribution in mbe grown compositionally graded ingan multiple quantum well leds |
| topic | Compositional grading Light emitting diodes (LEDs) polarization field semiconductor quantum well solid state lighting wavefunction overlap |
| url | https://ieeexplore.ieee.org/document/7102690/ |
| work_keys_str_mv | AT pawanmishra achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT bilaljanjua achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT tienkheeng achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT chaoshen achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT abdelmajidsalhi achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT ahmedyalyamani achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT munirmeldesouki achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds AT boonsooi achievinguniformcarrierdistributioninmbegrowncompositionallygradedinganmultiplequantumwellleds |