Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

Tunable Schottky Barrier and Interfacial Electronic Properties in Graphene/ZnSe Heterostructures

With a direct bandgap, two-dimensional (2D) ZnSe is a promising semiconductor material in photoelectric device fields. In this work, based on first-principles methods, we theoretically studied the modulation of the Schottky barrier height (SBH) by applying horizontal and vertical strains on graphene...

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Bibliographic Details
Main Authors: Wenjun Xiao, Tianyun Liu, Yuefei Zhang, Zhen Zhong, Xinwei Zhang, Zijiang Luo, Bing Lv, Xun Zhou, Zhaocai Zhang, Xuefei Liu
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-10-01
Series:Frontiers in Chemistry
Subjects:
2D heterojunction
Schottky barrier height
horizontal and vertical strain
bader charge
density function theory
Online Access:https://www.frontiersin.org/articles/10.3389/fchem.2021.744977/full

Internet

https://www.frontiersin.org/articles/10.3389/fchem.2021.744977/full

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