Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy
Abstract Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearl...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-02-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-53478-2 |