Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy
Abstract Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearl...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2024-02-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-53478-2 |
| _version_ | 1797274550916874240 |
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| author | Kazuma Takeuchi Hiroyuki Ogura Noriyuki Hasuike Takeshi Kamikawa |
| author_facet | Kazuma Takeuchi Hiroyuki Ogura Noriyuki Hasuike Takeshi Kamikawa |
| author_sort | Kazuma Takeuchi |
| collection | DOAJ |
| description | Abstract Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with $$z(xx)\overline{z }$$ z ( x x ) z ¯ and $$z(yx)\overline{z }$$ z ( y x ) z ¯ polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices. |
| first_indexed | 2024-03-07T15:00:00Z |
| format | Article |
| id | doaj.art-ff3b1811e81042e7a129139aee262271 |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-03-07T15:00:00Z |
| publishDate | 2024-02-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-ff3b1811e81042e7a129139aee2622712024-03-05T19:12:49ZengNature PortfolioScientific Reports2045-23222024-02-0114111010.1038/s41598-024-53478-2Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopyKazuma Takeuchi0Hiroyuki Ogura1Noriyuki Hasuike2Takeshi Kamikawa3Corporate R&D Group, Keihanna Research Center, Kyocera CorporationCorporate R&D Group, Keihanna Research Center, Kyocera CorporationFaculty of Electrical Engineering and Electronics, Kyoto Institute of TechnologyCorporate R&D Group, Keihanna Research Center, Kyocera CorporationAbstract Strain engineering for gallium nitride has been studied by many researchers to improve the performance of various devices (i.e., light-emitting diodes, laser diodes, power devices, high electron mobility transistors, and so on). Further miniaturization of gallium nitride devices will clearly continue in the future, and therefore an accurate understanding of the strain state in the devices is essential. However, a measurement technique for axially resolved evaluation of the strain in microareas has not yet been established. In this study, we revealed that the anisotropic strain state induced in c-plane growth gallium nitride is linked to the split state of Raman peaks, which were measured with $$z(xx)\overline{z }$$ z ( x x ) z ¯ and $$z(yx)\overline{z }$$ z ( y x ) z ¯ polarized configurations. The anisotropic strain state in c-plane gallium nitride was induced in the 3D-structure by epitaxial lateral overgrowth, which enabled successful performance of our work. This result allowed us to axially decompose the strain in c-plane gallium nitride through Raman spectroscopy and establish a measurement technique for axially resolving the strain. This measurement technique is feasible using a conventional Raman spectrometer. Furthermore, the method was indicated to be applicable to all wurtzite-type crystals, including gallium nitride, silicon carbide, and aluminum nitride. Our work provides a new perspective for understanding the complex strain state in microareas for wurtzite materials. Comprehending the strain state, which strongly affects device performance, will help promote the research and development of III-V semiconductor devices.https://doi.org/10.1038/s41598-024-53478-2 |
| spellingShingle | Kazuma Takeuchi Hiroyuki Ogura Noriyuki Hasuike Takeshi Kamikawa Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy Scientific Reports |
| title | Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy |
| title_full | Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy |
| title_fullStr | Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy |
| title_full_unstemmed | Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy |
| title_short | Decomposition of the anisotropic strain in 3D-structure GaN layers using Raman spectroscopy |
| title_sort | decomposition of the anisotropic strain in 3d structure gan layers using raman spectroscopy |
| url | https://doi.org/10.1038/s41598-024-53478-2 |
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