Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100) surface using a low-temperature scanning tunneling microscope. By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB ele...

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Bibliographic Details
Main Authors: Hatem Labidi, Marco Taucer, Mohammad Rashidi, Mohammad Koleini, Lucian Livadaru, Jason Pitters, Martin Cloutier, Mark Salomons, Robert A Wolkow
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
STM
scanning tunneling spectroscopy
silicon dangling bond
charge state transition
silicon atomic quantum dot
Online Access:https://doi.org/10.1088/1367-2630/17/7/073023

Internet

https://doi.org/10.1088/1367-2630/17/7/073023

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