Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

Scanning tunneling spectroscopy reveals a silicon dangling bond charge state transition

We report the study of single dangling bonds (DBs) on a hydrogen-terminated silicon (100) surface using a low-temperature scanning tunneling microscope. By investigating samples prepared with different annealing temperatures, we establish the critical role of subsurface arsenic dopants on the DB ele...

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Bibliographic Details
Main Authors:	Hatem Labidi, Marco Taucer, Mohammad Rashidi, Mohammad Koleini, Lucian Livadaru, Jason Pitters, Martin Cloutier, Mark Salomons, Robert A Wolkow
Format:	Article
Language:	English
Published:	IOP Publishing 2015-01-01
Series:	New Journal of Physics
Subjects:	STM scanning tunneling spectroscopy silicon dangling bond charge state transition silicon atomic quantum dot
Online Access:	https://doi.org/10.1088/1367-2630/17/7/073023

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