The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O<sub>2</sub>/He Plasmas for Thermopile Devices

The Study of Reactive Ion Etching of Heavily Doped Polysilicon Based on HBr/O<sub>2</sub>/He Plasmas for Thermopile Devices

Heavily doped polysilicon layers have been widely used in the fabrication of microelectromechanical systems (MEMS). However, the investigation of high selectivity, anisotropy, and excellent uniformity of heavily doped polysilicon etching is limited. In this work, reactive ion etching of undoped and...

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Bibliographic Details
Main Authors: Na Zhou, Junjie Li, Haiyang Mao, Hao Liu, Jinbiao Liu, Jianfeng Gao, Jinjuan Xiang, Yanpeng Hu, Meng Shi, Jiaxin Ju, Yuxiao Lei, Tao Yang, Junfeng Li, Wenwu Wang
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Materials
Subjects:
heavily doped
polysilicon
etch
HBr/O<sub>2</sub>/He
thermopile
Online Access:https://www.mdpi.com/1996-1944/13/19/4278

Internet

https://www.mdpi.com/1996-1944/13/19/4278

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