Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

Atomistic Simulation of the Ion-Assisted Deposition of Silicon Dioxide Thin Films

A systematic study of the most significant parameters of the ion-assisted deposited silicon dioxide films is carried out using the classical molecular dynamics method. The energy of the deposited silicon and oxygen atoms corresponds to the thermal evaporation of the target; the energy of the assisti...

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Bibliographic Details
Main Authors: F. V. Grigoriev, V. B. Sulimov, A. V. Tikhonravov
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Nanomaterials
Subjects:
molecular dynamics
ion-assisted deposition
thin films
silicon dioxide films
Online Access:https://www.mdpi.com/2079-4991/12/18/3242

Internet

https://www.mdpi.com/2079-4991/12/18/3242

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