MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
The investigation of the III-V nitride-based driving circuits is in demand for the development of GaN-based power electronic devices. In this work, we aim to grow high-quality InGaN/GaN heterojunctions on the <i>n</i>-channel AlGaN/GaN-on-Si high electron mobility transistor (HEMT) templ...
| Main Authors: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
MDPI AG
2019-04-01
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| Colecção: | Applied Sciences |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/2076-3417/9/9/1746 |