Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

Electrical Performance and Stability Improvements of High-Mobility Indium–Gallium–Tin Oxide Thin-Film Transistors Using an Oxidized Aluminum Capping Layer of Optimal Thickness

We examined the effects of aluminum (Al) capping layer thickness on the electrical performance and stability of high-mobility indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs). The Al capping layers with thicknesses (<i>t</i><sub>Al</sub>s) of 3, 5, and 8 nm were d...

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Bibliographic Details
Main Authors: Hyun-Seok Cha, Hwan-Seok Jeong, Seong-Hyun Hwang, Dong-Ho Lee, Hyuck-In Kwon
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Electronics
Subjects:
In–Ga–Sn–O (IGTO), thin-film transistor (TFT), Al capping layer
optimal thickness
weakly bonded oxygen species
Online Access:https://www.mdpi.com/2079-9292/9/12/2196

Internet

https://www.mdpi.com/2079-9292/9/12/2196

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