Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Ferroelectric Field‐Effect‐Transistor Integrated with Ferroelectrics Heterostructure

Abstract To address the demands of emerging data‐centric computing applications, ferroelectric field‐effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing to their energy and area efficiency and merged logic–memory functionalities. Herein, the fabrication and a...

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Bibliographic Details
Main Authors: Sungpyo Baek, Hyun Ho Yoo, Jae Hyeok Ju, Panithan Sriboriboon, Prashant Singh, Jingjie Niu, Jin‐Hong Park, Changhwan Shin, Yunseok Kim, Sungjoo Lee
Format: Article
Language:English
Published: Wiley 2022-07-01
Series:Advanced Science
Subjects:
ferroelectric semiconductors
ferroelectronics
van der Waals ferroelectric heterostructures
Online Access:https://doi.org/10.1002/advs.202200566

Internet

https://doi.org/10.1002/advs.202200566

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