Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure
A SiO _2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO _2 /p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher...
Main Authors: | , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2020-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/abbc40 |