Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure
A SiO _2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO _2 /p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abbc40 |
| _version_ | 1797746917938036736 |
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| author | E Saloma S Alcántara N Hernández-Como J Villanueva-Cab M Chavez G Pérez-Luna J Alvarado |
| author_facet | E Saloma S Alcántara N Hernández-Como J Villanueva-Cab M Chavez G Pérez-Luna J Alvarado |
| author_sort | E Saloma |
| collection | DOAJ |
| description | A SiO _2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO _2 /p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher active area, as well as to obtain some electrical parameters such as the barrier height, the ideality factor and the density of interface states, which correspond to 0.97 eV, 1.46 and 4.44 × 10 ^10 eV ^−1 cm ^−2 respectively. Furthermore, a fill factor of 0.202 and power conversion efficiency less than 1%. On the other hand, Capacitance-Voltage (C–V) measurements depict a positive and negative capacitance peaks at low frequencies; this behavior and photoelectric effect are attributed to the density of interface states at SiO _2 /p-Si, as well as to the Space-Charge-Limited Conduction process in the insulation layer. Furthermore, the use of this kind of insulator can allows increasing the conversion efficiency if it is used as bottom n-layer or front contact in tandem solar cells and silicon heterojunction solar cells, respectively. |
| first_indexed | 2024-03-12T15:44:38Z |
| format | Article |
| id | doaj.art-ffe32b9b47864935806383e61e23bf42 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:44:38Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-ffe32b9b47864935806383e61e23bf422023-08-09T15:50:51ZengIOP PublishingMaterials Research Express2053-15912020-01-0171010590210.1088/2053-1591/abbc40Photoelectric effect on an Al/SiO2/p-Si Schottky diode structureE Saloma0https://orcid.org/0000-0001-6135-7490S Alcántara1N Hernández-Como2https://orcid.org/0000-0003-0964-397XJ Villanueva-Cab3M Chavez4https://orcid.org/0000-0002-3491-2759G Pérez-Luna5J Alvarado6https://orcid.org/0000-0001-7186-4429Benemérita Universidad Autónoma de Puebla, CIDS, Av. San Claudio y 18 Sur, Col. San Manuel, Ciudad Universitaria , C.P. 72570, PO Box 1067, Puebla, Pue. 7200, MéxicoBenemérita Universidad Autónoma de Puebla, CIDS, Av. San Claudio y 18 Sur, Col. San Manuel, Ciudad Universitaria , C.P. 72570, PO Box 1067, Puebla, Pue. 7200, MéxicoCentro de Nanociencias y Micro y Nanotecnologías, Instituto Politécnico Nacional , MéxicoInstituto de Física, Unidad Ecocampus-Valsequillo, Benemérita Universidad Autónoma de Puebla , Apdo. Postal J-48, Puebla, Puebla 72570, MéxicoBenemérita Universidad Autónoma de Puebla, CIDS, Av. San Claudio y 18 Sur, Col. San Manuel, Ciudad Universitaria , C.P. 72570, PO Box 1067, Puebla, Pue. 7200, MéxicoBenemérita Universidad Autónoma de Puebla, CIDS, Av. San Claudio y 18 Sur, Col. San Manuel, Ciudad Universitaria , C.P. 72570, PO Box 1067, Puebla, Pue. 7200, MéxicoBenemérita Universidad Autónoma de Puebla, CIDS, Av. San Claudio y 18 Sur, Col. San Manuel, Ciudad Universitaria , C.P. 72570, PO Box 1067, Puebla, Pue. 7200, MéxicoA SiO _2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO _2 /p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher active area, as well as to obtain some electrical parameters such as the barrier height, the ideality factor and the density of interface states, which correspond to 0.97 eV, 1.46 and 4.44 × 10 ^10 eV ^−1 cm ^−2 respectively. Furthermore, a fill factor of 0.202 and power conversion efficiency less than 1%. On the other hand, Capacitance-Voltage (C–V) measurements depict a positive and negative capacitance peaks at low frequencies; this behavior and photoelectric effect are attributed to the density of interface states at SiO _2 /p-Si, as well as to the Space-Charge-Limited Conduction process in the insulation layer. Furthermore, the use of this kind of insulator can allows increasing the conversion efficiency if it is used as bottom n-layer or front contact in tandem solar cells and silicon heterojunction solar cells, respectively.https://doi.org/10.1088/2053-1591/abbc40MIS Schottky diodephotoelectric effectsilicon photoelectric cell |
| spellingShingle | E Saloma S Alcántara N Hernández-Como J Villanueva-Cab M Chavez G Pérez-Luna J Alvarado Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure Materials Research Express MIS Schottky diode photoelectric effect silicon photoelectric cell |
| title | Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure |
| title_full | Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure |
| title_fullStr | Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure |
| title_full_unstemmed | Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure |
| title_short | Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure |
| title_sort | photoelectric effect on an al sio2 p si schottky diode structure |
| topic | MIS Schottky diode photoelectric effect silicon photoelectric cell |
| url | https://doi.org/10.1088/2053-1591/abbc40 |
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