Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure

Photoelectric effect on an Al/SiO2/p-Si Schottky diode structure

A SiO _2 of 200 nm thickness layer was grown via thermal oxidation to obtain an Al/SiO _2 /p-Si MIS Schottky diode structure with top contacts and different active areas. Electrical measurements of MIS Schottky diode structure allow to observe the photoelectric effect only in the device with higher...

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Bibliographic Details
Main Authors:	E Saloma, S Alcántara, N Hernández-Como, J Villanueva-Cab, M Chavez, G Pérez-Luna, J Alvarado
Format:	Article
Language:	English
Published:	IOP Publishing 2020-01-01
Series:	Materials Research Express
Subjects:	MIS Schottky diode photoelectric effect silicon photoelectric cell
Online Access:	https://doi.org/10.1088/2053-1591/abbc40

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