InGaAs-OI Substrate Fabrication on a 300 mm Wafer

InGaAs-OI Substrate Fabrication on a 300 mm Wafer

In this work, we demonstrate for the first time a 300-mm indium–gallium–arsenic (InGaAs) wafer on insulator (InGaAs-OI) substrates by splitting in an InP sacrificial layer. A 30-nm-thick InGaAs layer was successfully transferred using low temperature direct wafer bonding (DWB) and Smart CutTM techno...

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Bibliographic Details
Main Authors: Sebastien Sollier, Julie Widiez, Gweltaz Gaudin, Frederic Mazen, Thierry Baron, Mickail Martin, Marie-Christine Roure, Pascal Besson, Christophe Morales, Elodie Beche, Frank Fournel, Sylvie Favier, Amelie Salaun, Patrice Gergaud, Maryline Cordeau, Christellle Veytizou, Ludovic Ecarnot, Daniel Delprat, Ionut Radu, Thomas Signamarcheix
Format: Article
Language:English
Published: MDPI AG 2016-09-01
Series:Journal of Low Power Electronics and Applications
Subjects:
InGaAs
Smart CutTM
direct bonding
thin layer transfer
Al2O3
Online Access:http://www.mdpi.com/2079-9268/6/4/19

Internet

http://www.mdpi.com/2079-9268/6/4/19

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