Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1

Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality ho...

Full description

Bibliographic Details
Main Authors: Hyung Min Jeon, Kevin D. Leedy, David C. Look, Celesta S. Chang, David A. Muller, Stefan C. Badescu, Vladimir Vasilyev, Jeff L. Brown, Andrew J. Green, Kelson D. Chabak
Format: Article
Language:English
Published: AIP Publishing LLC 2021-10-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/5.0062056

Internet

http://dx.doi.org/10.1063/5.0062056

Similar Items