Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1
Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality ho...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-10-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0062056 |
| _version_ | 1818690446476443648 |
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| author | Hyung Min Jeon Kevin D. Leedy David C. Look Celesta S. Chang David A. Muller Stefan C. Badescu Vladimir Vasilyev Jeff L. Brown Andrew J. Green Kelson D. Chabak |
| author_facet | Hyung Min Jeon Kevin D. Leedy David C. Look Celesta S. Chang David A. Muller Stefan C. Badescu Vladimir Vasilyev Jeff L. Brown Andrew J. Green Kelson D. Chabak |
| author_sort | Hyung Min Jeon |
| collection | DOAJ |
| description | Conductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications. |
| first_indexed | 2024-12-17T12:26:08Z |
| format | Article |
| id | doaj.art-fff04251cec24e788445f8f34248763d |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-12-17T12:26:08Z |
| publishDate | 2021-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-fff04251cec24e788445f8f34248763d2022-12-21T21:48:45ZengAIP Publishing LLCAPL Materials2166-532X2021-10-01910101105101105-810.1063/5.0062056Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1Hyung Min Jeon0Kevin D. Leedy1David C. Look2Celesta S. Chang3David A. Muller4Stefan C. Badescu5Vladimir Vasilyev6Jeff L. Brown7Andrew J. Green8Kelson D. Chabak9Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAResearch Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USASchool of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAKBR, Beavercreek, Ohio 45431, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAAir Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio 45433, USAConductive homoepitaxial Si-doped β-Ga2O3 films were fabricated by pulsed laser deposition with an as-deposited 2323 S cm−1 conductivity (resistivity = 4.3 × 10−4 Ω-cm, carrier concentration = 2.24 × 1020 cm−3, mobility = 64.5 cm2 V−1 s−1, and electrical activation efficiency = 77%). High quality homoepitaxial films deposited on commercial (010) Fe-compensated β-Ga2O substrates were determined by high-resolution transmission electron microscopy and x-ray diffraction. The β-Ga2O3 films have ∼70% transparency from 3.7 eV (335 nm) to 0.56 eV (2214 nm). The combination of high conductivity and transparency offers promise for numerous ultrawide bandgap electronics and optoelectronic applications.http://dx.doi.org/10.1063/5.0062056 |
| spellingShingle | Hyung Min Jeon Kevin D. Leedy David C. Look Celesta S. Chang David A. Muller Stefan C. Badescu Vladimir Vasilyev Jeff L. Brown Andrew J. Green Kelson D. Chabak Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 APL Materials |
| title | Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 |
| title_full | Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 |
| title_fullStr | Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 |
| title_full_unstemmed | Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 |
| title_short | Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ = 2323 S cm−1 |
| title_sort | homoepitaxial β ga2o3 transparent conducting oxide with conductivity σ 2323 s cm 1 |
| url | http://dx.doi.org/10.1063/5.0062056 |
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