Power Performance Analysis of Digital Standard Cells for 28 nm Bulk CMOS at Cryogenic Temperature Using BSIM Models

Power Performance Analysis of Digital Standard Cells for 28 nm Bulk CMOS at Cryogenic Temperature Using BSIM Models

Cryogenic CMOS is a crucial component in building scalable quantum computers, predominantly for interface and control circuitry. Further, high-performance computing can also benefit from cryogenic boosters. This necessitates an in-depth understanding of the power and performance trade-offs in the cr...

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Bibliographic Details
Main Authors: Rakshith Saligram, Wriddhi Chakraborty, Ningyuan Cao, Yu Cao, Suman Datta, Arijit Raychowdhury
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Subjects:
Berkeley Short-channel IGFET Model (BSIM)4
cryogenic CMOS (Cryo-CMOS)
ring oscillators (ROs)
standard cells
static characteristics
threshold voltage
Online Access:https://ieeexplore.ieee.org/document/9627705/

Internet

https://ieeexplore.ieee.org/document/9627705/

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