Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H
Strain in a material induces shifts in vibrational frequencies. This phenomenon is a probe of the nature of the vibrations and interatomic potentials and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to the...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2016
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| Online Access: | http://hdl.handle.net/1721.1/100737 https://orcid.org/0000-0002-2432-8575 https://orcid.org/0000-0003-2426-5532 https://orcid.org/0000-0001-8345-4937 |