Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H
Strain in a material induces shifts in vibrational frequencies. This phenomenon is a probe of the nature of the vibrations and interatomic potentials and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to the...
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
American Physical Society
2016
|
| Online Access: | http://hdl.handle.net/1721.1/100737 https://orcid.org/0000-0002-2432-8575 https://orcid.org/0000-0003-2426-5532 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1826202024784429056 |
|---|---|
| author | Johlin, Eric C. Kirkpatrick, Timothy R. Buonassisi, Tonio Grossman, Jeffrey C. Strubbe, David |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Johlin, Eric C. Kirkpatrick, Timothy R. Buonassisi, Tonio Grossman, Jeffrey C. Strubbe, David |
| author_sort | Johlin, Eric C. |
| collection | MIT |
| description | Strain in a material induces shifts in vibrational frequencies. This phenomenon is a probe of the nature of the vibrations and interatomic potentials and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to the lack of calibration relations, it has not been applied to amorphous materials such as hydrogenated amorphous silicon (a-Si:H), a widely studied material for thin-film photovoltaic and electronic devices. We calculated the Raman spectrum of a-Si:H ab initio under different strains ε and found peak shifts Δω = (−460 ± 10 cm[superscript −1])T rε. This proportionality to the trace of the strain is the general form for isotropic amorphous vibrational modes, as we show by symmetry analysis and explicit computation. We also performed Raman measurements under strain and found a consistent coefficient of −510 ± 120 cm[superscript −1]. These results demonstrate that a reliable calibration for the Raman/strain relation can be achieved even for the broad peaks of an amorphous material, with similar accuracy and precision as for crystalline materials. |
| first_indexed | 2024-09-23T12:01:00Z |
| format | Article |
| id | mit-1721.1/100737 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T12:01:00Z |
| publishDate | 2016 |
| publisher | American Physical Society |
| record_format | dspace |
| spelling | mit-1721.1/1007372022-10-01T07:38:07Z Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H Johlin, Eric C. Kirkpatrick, Timothy R. Buonassisi, Tonio Grossman, Jeffrey C. Strubbe, David Massachusetts Institute of Technology. Department of Materials Science and Engineering Massachusetts Institute of Technology. Department of Mechanical Engineering Strubbe, David Johlin, Eric Carl Kirkpatrick, Timothy R. Buonassisi, Tonio Strubbe, David Strain in a material induces shifts in vibrational frequencies. This phenomenon is a probe of the nature of the vibrations and interatomic potentials and can be used to map local stress/strain distributions via Raman microscopy. This method is standard for crystalline silicon devices, but due to the lack of calibration relations, it has not been applied to amorphous materials such as hydrogenated amorphous silicon (a-Si:H), a widely studied material for thin-film photovoltaic and electronic devices. We calculated the Raman spectrum of a-Si:H ab initio under different strains ε and found peak shifts Δω = (−460 ± 10 cm[superscript −1])T rε. This proportionality to the trace of the strain is the general form for isotropic amorphous vibrational modes, as we show by symmetry analysis and explicit computation. We also performed Raman measurements under strain and found a consistent coefficient of −510 ± 120 cm[superscript −1]. These results demonstrate that a reliable calibration for the Raman/strain relation can be achieved even for the broad peaks of an amorphous material, with similar accuracy and precision as for crystalline materials. Center for Clean Water and Clean Energy at MIT and KFUPM (Project R1-CE-08) 2016-01-07T01:28:39Z 2016-01-07T01:28:39Z 2015-12 2015-11 2015-12-18T23:00:01Z Article http://purl.org/eprint/type/JournalArticle 1098-0121 1550-235X http://hdl.handle.net/1721.1/100737 Strubbe, David A., Eric C. Johlin, Timothy R. Kirkpatrick, Tonio Buonassisi, and Jeffrey C. Grossman. “Stress Effects on the Raman Spectrum of an Amorphous Material: Theory and Experiment on a-Si:H.” Physical Review B 92, no. 24 (December 18, 2015). © 2015 American Physical Society https://orcid.org/0000-0002-2432-8575 https://orcid.org/0000-0003-2426-5532 https://orcid.org/0000-0001-8345-4937 en http://dx.doi.org/10.1103/PhysRevB.92.241202 Physical Review B Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. American Physical Society application/pdf American Physical Society American Physical Society |
| spellingShingle | Johlin, Eric C. Kirkpatrick, Timothy R. Buonassisi, Tonio Grossman, Jeffrey C. Strubbe, David Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title | Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title_full | Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title_fullStr | Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title_full_unstemmed | Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title_short | Stress effects on the Raman spectrum of an amorphous material: Theory and experiment on a-Si:H |
| title_sort | stress effects on the raman spectrum of an amorphous material theory and experiment on a si h |
| url | http://hdl.handle.net/1721.1/100737 https://orcid.org/0000-0002-2432-8575 https://orcid.org/0000-0003-2426-5532 https://orcid.org/0000-0001-8345-4937 |
| work_keys_str_mv | AT johlinericc stresseffectsontheramanspectrumofanamorphousmaterialtheoryandexperimentonasih AT kirkpatricktimothyr stresseffectsontheramanspectrumofanamorphousmaterialtheoryandexperimentonasih AT buonassisitonio stresseffectsontheramanspectrumofanamorphousmaterialtheoryandexperimentonasih AT grossmanjeffreyc stresseffectsontheramanspectrumofanamorphousmaterialtheoryandexperimentonasih AT strubbedavid stresseffectsontheramanspectrumofanamorphousmaterialtheoryandexperimentonasih |