AlN-AlN Layer Bonding and Its Thermal Characteristics
Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face direct dielectric bonding of clean and smooth aluminum nitride (AlN) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially ox...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Electrochemical Society
2016
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| Online Access: | http://hdl.handle.net/1721.1/101884 https://orcid.org/0000-0002-1891-1959 |