Graphene Oxide as a Promising Hole Injection Layer for MoS[subscript 2]-based Electronic Devices

Graphene Oxide as a Promising Hole Injection Layer for MoS[subscript 2]-based Electronic Devices

The excellent physical and semiconducting properties of transition metal dichalcogenide (TMDC) monolayers make them promising materials for many applications. The TMDC monolayer MoS[subscript 2] has gained significant attention as a channel material for next-generation transistors. However, while n...

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Bibliographic Details
Main Authors: Musso, Tiziana, Kumar, Priyank V., Foster, Adam S., Grossman, Jeffrey C.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2016
Online Access:http://hdl.handle.net/1721.1/101938
https://orcid.org/0000-0003-1281-2359

Internet

http://hdl.handle.net/1721.1/101938
https://orcid.org/0000-0003-1281-2359

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