Positive-bias temperature instability (PBTI) of GaN MOSFETs
We have investigated the stability of the gate stack of GaN n-MOSFETs under positive gate stress. Devices with a gate dielectric that consists of pure SiO[subscript 2] or a composite SiO[subscript 2]/Al[subscript 2]O[subscript 3] bilayer were studied. Our research has targeted the evolution of thres...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102322 https://orcid.org/0000-0002-2363-049X |