Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient

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A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressur...

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Bibliographic Details
Main Authors: Lee, Kwang Hong, Bao, Shuyu, Chong, Gang Yih, Tan, Yew Heng, Fitzgerald, Eugene A., Tan, Chuan Seng
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2016
Online Access:http://hdl.handle.net/1721.1/102591
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/102591
https://orcid.org/0000-0002-1891-1959

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