Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient
A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102591 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1826203008501809152 |
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| author | Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng |
| author_sort | Lee, Kwang Hong |
| collection | MIT |
| description | A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 10[superscript 6] cm[superscript −2]. |
| first_indexed | 2024-09-23T12:30:16Z |
| format | Article |
| id | mit-1721.1/102591 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:30:16Z |
| publishDate | 2016 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1025912022-10-01T09:22:51Z Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng Massachusetts Institute of Technology. Department of Materials Science and Engineering Fitzgerald, Eugene A. Fitzgerald, Eugene A. A method to remove the misfit dislocations and reduce the threading dislocations density (TDD) in the germanium (Ge) epilayer growth on a silicon (Si) substrate is presented. The Ge epitaxial film is grown directly on the Si (001) donor wafer using a “three-step growth” approach in a reduced pressure chemical vapour deposition. The Ge epilayer is then bonded and transferred to another Si (001) handle wafer to form a germanium-on-insulator (GOI) substrate. The misfit dislocations, which are initially hidden along the Ge/Si interface, are now accessible from the top surface. These misfit dislocations are then removed by annealing the GOI substrate. After the annealing, the TDD of the Ge epilayer can be reduced by at least two orders of magnitude to <5 × 10[superscript 6] cm[superscript −2]. Singapore. National Research Foundation (Singapore-MIT Alliance for Research and Technology) 2016-05-23T01:29:33Z 2016-05-23T01:29:33Z 2015-01 2014-10 Article http://purl.org/eprint/type/JournalArticle 2166-532X http://hdl.handle.net/1721.1/102591 Lee, Kwang Hong, Shuyu Bao, Gang Yih Chong, Yew Heng Tan, Eugene A. Fitzgerald, and Chuan Seng Tan. “Defects Reduction of Ge Epitaxial Film in a Germanium-on-Insulator Wafer by Annealing in Oxygen Ambient.” APL Materials 3, no. 1 (January 1, 2015): 16102. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1063/1.4905487 APL Materials Creative Commons Attribution http://creativecommons.org/licenses/by/4.0/ application/pdf American Institute of Physics (AIP) Fitzgerald |
| spellingShingle | Lee, Kwang Hong Bao, Shuyu Chong, Gang Yih Tan, Yew Heng Fitzgerald, Eugene A. Tan, Chuan Seng Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title_full | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title_fullStr | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title_full_unstemmed | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title_short | Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient |
| title_sort | defects reduction of ge epitaxial film in a germanium on insulator wafer by annealing in oxygen ambient |
| url | http://hdl.handle.net/1721.1/102591 https://orcid.org/0000-0002-1891-1959 |
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