Room-Temperature Ballistic Transport in III-Nitride Heterostructures
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III–V materials due to their high electron mobilities. However, their application to RT ballistic d...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Chemical Society (ACS)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102668 https://orcid.org/0000-0002-2190-563X |