Room-Temperature Ballistic Transport in III-Nitride Heterostructures
Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III–V materials due to their high electron mobilities. However, their application to RT ballistic d...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Chemical Society (ACS)
2016
|
| Online Access: | http://hdl.handle.net/1721.1/102668 https://orcid.org/0000-0002-2190-563X |
| _version_ | 1826205151394791424 |
|---|---|
| author | Matioli, Elison Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Matioli, Elison Palacios, Tomas |
| author_sort | Matioli, Elison |
| collection | MIT |
| description | Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III–V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III–V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT. |
| first_indexed | 2024-09-23T13:08:32Z |
| format | Article |
| id | mit-1721.1/102668 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:08:32Z |
| publishDate | 2016 |
| publisher | American Chemical Society (ACS) |
| record_format | dspace |
| spelling | mit-1721.1/1026682022-09-28T12:12:00Z Room-Temperature Ballistic Transport in III-Nitride Heterostructures Matioli, Elison Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Matioli, Elison Palacios, Tomas Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III–V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the short electron mean-free-path at RT requires nanoscale devices for which surface effects are a limitation in these materials. We explore the unique properties of wide band-gap III-nitride semiconductors to demonstrate RT ballistic devices. A theoretical model is proposed to corroborate experimentally their optical phonon energy of 92 meV, which is ∼4× larger than in other III–V semiconductors. This allows RT ballistic devices operating at larger voltages and currents. An additional model is described to determine experimentally a characteristic dimension for ballistic transport of 188 nm. Another remarkable property is their short carrier depletion at device sidewalls, down to 13 nm, which allows top-down nanofabrication of very narrow ballistic devices. These results open a wealth of new systems and basic transport studies possible at RT. United States. Defense Advanced Research Projects Agency. Nitride Electronic NeXt-Generation Technology (NEXT) Program United States. Office of Naval Research. Young Investigator Program 2016-05-24T23:26:25Z 2016-05-24T23:26:25Z 2015-01 2014-12 Article http://purl.org/eprint/type/JournalArticle 1530-6984 1530-6992 http://hdl.handle.net/1721.1/102668 Matioli, Elison, and Tomas Palacios. “Room-Temperature Ballistic Transport in III-Nitride Heterostructures.” Nano Lett. 15, no. 2 (February 11, 2015): 1070–1075. https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1021/nl504029r Nano Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Chemical Society (ACS) Prof. Palacios via Phoebe Ayers |
| spellingShingle | Matioli, Elison Palacios, Tomas Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title | Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title_full | Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title_fullStr | Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title_full_unstemmed | Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title_short | Room-Temperature Ballistic Transport in III-Nitride Heterostructures |
| title_sort | room temperature ballistic transport in iii nitride heterostructures |
| url | http://hdl.handle.net/1721.1/102668 https://orcid.org/0000-0002-2190-563X |
| work_keys_str_mv | AT matiolielison roomtemperatureballistictransportiniiinitrideheterostructures AT palaciostomas roomtemperatureballistictransportiniiinitrideheterostructures |