Correlation of a generation-recombination center with a deep level trap in GaN

Correlation of a generation-recombination center with a deep level trap in GaN

We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E[subscript c] −...

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Bibliographic Details
Main Authors: Nguyen, X. S., Lin, K., Zhang, Z., McSkimming, B., Arehart, A. R., Speck, J. S., Ringel, S. A., Fitzgerald, Eugene A., Chua, S. J.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Institute of Physics (AIP) 2016
Online Access:http://hdl.handle.net/1721.1/102993
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/102993
https://orcid.org/0000-0002-1891-1959

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