Correlation of a generation-recombination center with a deep level trap in GaN
We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E[subscript c] −...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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American Institute of Physics (AIP)
2016
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| Online Access: | http://hdl.handle.net/1721.1/102993 https://orcid.org/0000-0002-1891-1959 |
| _version_ | 1811092277976629248 |
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| author | Nguyen, X. S. Lin, K. Zhang, Z. McSkimming, B. Arehart, A. R. Speck, J. S. Ringel, S. A. Fitzgerald, Eugene A. Chua, S. J. |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Nguyen, X. S. Lin, K. Zhang, Z. McSkimming, B. Arehart, A. R. Speck, J. S. Ringel, S. A. Fitzgerald, Eugene A. Chua, S. J. |
| author_sort | Nguyen, X. S. |
| collection | MIT |
| description | We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E[subscript c] − 0.26 eV, E[subscript c] − 0.59 eV, and E[subscript c] − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E[subscript c] − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E[subscript c] − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials. |
| first_indexed | 2024-09-23T15:15:51Z |
| format | Article |
| id | mit-1721.1/102993 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:15:51Z |
| publishDate | 2016 |
| publisher | American Institute of Physics (AIP) |
| record_format | dspace |
| spelling | mit-1721.1/1029932022-10-02T01:47:50Z Correlation of a generation-recombination center with a deep level trap in GaN Nguyen, X. S. Lin, K. Zhang, Z. McSkimming, B. Arehart, A. R. Speck, J. S. Ringel, S. A. Fitzgerald, Eugene A. Chua, S. J. Massachusetts Institute of Technology. Department of Materials Science and Engineering Fitzgerald, Eugene A. Fitzgerald, Eugene A. We report on the identification of a deep level trap centre which contributes to generation-recombination noise. A n-GaN epilayer, grown by MOCVD on sapphire, was measured by deep level transient spectroscopy (DLTS) and noise spectroscopy. DLTS found 3 well documented deep levels at E[subscript c] − 0.26 eV, E[subscript c] − 0.59 eV, and E[subscript c] − 0.71 eV. The noise spectroscopy identified a generation recombination centre at E[subscript c] − 0.65 ± 0.1 eV with a recombination lifetime of 65 μs at 300 K. This level is considered to be the same as the one at E[subscript c] − 0.59 eV measured from DLTS, as they have similar trap densities and capture cross section. This result shows that some deep levels contribute to noise generation in GaN materials. 2016-06-06T17:02:41Z 2016-06-06T17:02:41Z 2015-03 2015-02 Article http://purl.org/eprint/type/JournalArticle 0003-6951 1077-3118 http://hdl.handle.net/1721.1/102993 Nguyen, X. S., K. Lin, Z. Zhang, B. McSkimming, A. R. Arehart, J. S. Speck, S. A. Ringel, E. A. Fitzgerald, and S. J. Chua. “Correlation of a Generation-Recombination Center with a Deep Level Trap in GaN.” Applied Physics Letters 106, no. 10 (March 9, 2015): 102101. ©2015 AIP Publishing LLC. https://orcid.org/0000-0002-1891-1959 en_US http://dx.doi.org/10.1063/1.4914393 Applied Physics Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf American Institute of Physics (AIP) Prof. Fitzgerald |
| spellingShingle | Nguyen, X. S. Lin, K. Zhang, Z. McSkimming, B. Arehart, A. R. Speck, J. S. Ringel, S. A. Fitzgerald, Eugene A. Chua, S. J. Correlation of a generation-recombination center with a deep level trap in GaN |
| title | Correlation of a generation-recombination center with a deep level trap in GaN |
| title_full | Correlation of a generation-recombination center with a deep level trap in GaN |
| title_fullStr | Correlation of a generation-recombination center with a deep level trap in GaN |
| title_full_unstemmed | Correlation of a generation-recombination center with a deep level trap in GaN |
| title_short | Correlation of a generation-recombination center with a deep level trap in GaN |
| title_sort | correlation of a generation recombination center with a deep level trap in gan |
| url | http://hdl.handle.net/1721.1/102993 https://orcid.org/0000-0002-1891-1959 |
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