Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films

Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films

The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and...

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Bibliographic Details
Main Authors: Khoo, Chee Ying, Liu, Hai, Sasangka, Wardhana A., Made, Riko I., Tamura, Nobu, Kunz, Martin, Budiman, Arief S., Gan, Chee Lip, Thompson, Carl Vernette
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer US 2016
Online Access:http://hdl.handle.net/1721.1/103352
https://orcid.org/0000-0002-0121-8285

Internet

http://hdl.handle.net/1721.1/103352
https://orcid.org/0000-0002-0121-8285

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