Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films
The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and...
| Autori principali: | , , , , , , , , |
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| Natura: | Articolo |
| Lingua: | English |
| Pubblicazione: |
Springer US
2016
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| Accesso online: | http://hdl.handle.net/1721.1/103352 https://orcid.org/0000-0002-0121-8285 |
| _version_ | 1826199240476459008 |
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| author | Khoo, Chee Ying Liu, Hai Sasangka, Wardhana A. Made, Riko I. Tamura, Nobu Kunz, Martin Budiman, Arief S. Gan, Chee Lip Thompson, Carl Vernette |
| author2 | Massachusetts Institute of Technology. Department of Materials Science and Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Materials Science and Engineering Khoo, Chee Ying Liu, Hai Sasangka, Wardhana A. Made, Riko I. Tamura, Nobu Kunz, Martin Budiman, Arief S. Gan, Chee Lip Thompson, Carl Vernette |
| author_sort | Khoo, Chee Ying |
| collection | MIT |
| description | The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger’s analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te–Te bonds and thereby reduces the barrier to crystal nucleation. |
| first_indexed | 2024-09-23T11:16:56Z |
| format | Article |
| id | mit-1721.1/103352 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:16:56Z |
| publishDate | 2016 |
| publisher | Springer US |
| record_format | dspace |
| spelling | mit-1721.1/1033522022-10-01T02:35:16Z Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films Khoo, Chee Ying Liu, Hai Sasangka, Wardhana A. Made, Riko I. Tamura, Nobu Kunz, Martin Budiman, Arief S. Gan, Chee Lip Thompson, Carl Vernette Massachusetts Institute of Technology. Department of Materials Science and Engineering Thompson, Carl Vernette Khoo, Chee Ying Gan, Chee Lip The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger’s analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te–Te bonds and thereby reduces the barrier to crystal nucleation. Singapore-MIT Alliance for Research and Technology (SMART) 2016-06-27T15:44:42Z 2017-03-01T16:14:47Z 2015-10 2015-06 2016-05-23T12:15:34Z Article http://purl.org/eprint/type/JournalArticle 0022-2461 1573-4803 http://hdl.handle.net/1721.1/103352 Khoo, Chee Ying, Hai Liu, Wardhana A. Sasangka, Riko I. Made, Nobu Tamura, Martin Kunz, Arief S. Budiman, Chee Lip Gan, and Carl V. Thompson. “Impact of Deposition Conditions on the Crystallization Kinetics of Amorphous GeTe Films.” Journal of Materials Science 51, no. 4 (October 20, 2015): 1864–1872. https://orcid.org/0000-0002-0121-8285 en http://dx.doi.org/10.1007/s10853-015-9493-z Journal of Materials Science Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ Springer Science+Business Media New York application/pdf Springer US Springer US |
| spellingShingle | Khoo, Chee Ying Liu, Hai Sasangka, Wardhana A. Made, Riko I. Tamura, Nobu Kunz, Martin Budiman, Arief S. Gan, Chee Lip Thompson, Carl Vernette Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title | Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title_full | Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title_fullStr | Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title_full_unstemmed | Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title_short | Impact of deposition conditions on the crystallization kinetics of amorphous GeTe films |
| title_sort | impact of deposition conditions on the crystallization kinetics of amorphous gete films |
| url | http://hdl.handle.net/1721.1/103352 https://orcid.org/0000-0002-0121-8285 |
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