Resonant tunneling and intrinsic bistability in twisted graphene structures

Resonant tunneling and intrinsic bistability in twisted graphene structures

We predict that vertical transport in heterostructures formed by twisted graphene layers can exhibit a unique bistability mechanism. Intrinsically bistable I-V characteristics arise from resonant tunneling and interlayer charge coupling, enabling multiple stable states in the sequential tunneling re...

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Bibliographic Details
Main Authors: Rodriguez Nieva, Joaquin Francisco, Dresselhaus, Mildred, Levitov, Leonid
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:English
Published: American Physical Society 2016
Online Access:http://hdl.handle.net/1721.1/103975
https://orcid.org/0000-0002-4268-731X
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0002-3023-396X

Internet

http://hdl.handle.net/1721.1/103975
https://orcid.org/0000-0002-4268-731X
https://orcid.org/0000-0001-8492-2261
https://orcid.org/0000-0002-3023-396X

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