Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon
Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is...
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Format: | Article |
Language: | English |
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Springer-Verlag
2016
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Online Access: | http://hdl.handle.net/1721.1/104882 |
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author | Vayrette, Renaud Raskin, Jean-Pierre Pardoen, Thomas Galceran, Montserrat Godet, Stéphane Noels, Ludovic Mulay, Shantanu S. Becker, Gauthier |
author2 | Massachusetts Institute of Technology. Department of Aeronautics and Astronautics |
author_facet | Massachusetts Institute of Technology. Department of Aeronautics and Astronautics Vayrette, Renaud Raskin, Jean-Pierre Pardoen, Thomas Galceran, Montserrat Godet, Stéphane Noels, Ludovic Mulay, Shantanu S. Becker, Gauthier |
author_sort | Vayrette, Renaud |
collection | MIT |
description | Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is investigated out of the several factors. This is achieved, firstly, by identifying the statistical variation of the fracture strength and critical strain energy release rate, at the nanoscopic scale, over a thin freestanding polycrystalline silicon film having mesoscopic scale dimensions. The fracture stress and strain at the mesoscopic level are found to be closely matching with uniaxial tension experimental results. Secondly, the polycrystalline silicon film is considered at the continuum MEMS scale, and its fracture behaviour is studied by incorporating the nanoscopic scale effect of grain orientation. The entire modelling and simulation of the thin film is achieved by combining the discontinuous Galerkin method and extrinsic cohesive law describing the fracture process. |
first_indexed | 2024-09-23T15:19:39Z |
format | Article |
id | mit-1721.1/104882 |
institution | Massachusetts Institute of Technology |
language | English |
last_indexed | 2024-09-23T15:19:39Z |
publishDate | 2016 |
publisher | Springer-Verlag |
record_format | dspace |
spelling | mit-1721.1/1048822022-09-29T14:15:13Z Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon Vayrette, Renaud Raskin, Jean-Pierre Pardoen, Thomas Galceran, Montserrat Godet, Stéphane Noels, Ludovic Mulay, Shantanu S. Becker, Gauthier Massachusetts Institute of Technology. Department of Aeronautics and Astronautics Becker, Gauthier Micro-electro-mechanical systems (MEMS) made of polycrystalline silicon are widely used in several engineering fields. The fracture properties of polycrystalline silicon directly affect their reliability. The effect of the orientation of grains on the fracture behaviour of polycrystalline silicon is investigated out of the several factors. This is achieved, firstly, by identifying the statistical variation of the fracture strength and critical strain energy release rate, at the nanoscopic scale, over a thin freestanding polycrystalline silicon film having mesoscopic scale dimensions. The fracture stress and strain at the mesoscopic level are found to be closely matching with uniaxial tension experimental results. Secondly, the polycrystalline silicon film is considered at the continuum MEMS scale, and its fracture behaviour is studied by incorporating the nanoscopic scale effect of grain orientation. The entire modelling and simulation of the thin film is achieved by combining the discontinuous Galerkin method and extrinsic cohesive law describing the fracture process. Belgian National Foundation for Scientific Research (FRFC 2.4508.11) Belgian National Foundation for Scientific Research (PDR T.0122.13 “MECANO”) 2016-10-20T17:04:14Z 2016-10-20T17:04:14Z 2014-10 2014-06 2016-08-18T15:28:02Z Article http://purl.org/eprint/type/JournalArticle 0178-7675 1432-0924 http://hdl.handle.net/1721.1/104882 Mulay, Shantanu S., Gauthier Becker, Renaud Vayrette, et al. "Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon." Computational Mechanics, vol. 55, no. 1, October 2014, pp. 73-91. en http://dx.doi.org/10.1007/s00466-014-1083-4 Computational Mechanics Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. Springer-Verlag Berlin Heidelberg application/pdf Springer-Verlag Springer Berlin Heidelberg |
spellingShingle | Vayrette, Renaud Raskin, Jean-Pierre Pardoen, Thomas Galceran, Montserrat Godet, Stéphane Noels, Ludovic Mulay, Shantanu S. Becker, Gauthier Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title | Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title_full | Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title_fullStr | Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title_full_unstemmed | Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title_short | Multiscale modelling framework for the fracture of thin brittle polycrystalline films: application to polysilicon |
title_sort | multiscale modelling framework for the fracture of thin brittle polycrystalline films application to polysilicon |
url | http://hdl.handle.net/1721.1/104882 |
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