Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut

The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and high...

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Bibliographic Details
Main Authors: Tan, Yew Heng, Lee, Kwang Hong, Jandl, Adam Christopher, Fitzgerald, Eugene A, Tan, Chuan Seng
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:English
Published: Springer US 2016
Online Access:http://hdl.handle.net/1721.1/105856
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/105856
https://orcid.org/0000-0002-1891-1959

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