Comparative Studies of the Growth and Characterization of Germanium Epitaxial Film on Silicon (001) with 0° and 6° Offcut
The quality of germanium (Ge) epitaxial films grown directly on silicon (Si) (001) with 0° and 6° offcut orientation using a reduced-pressure chemical vapor deposition system is studied and compared. Ge film grown on Si (001) with 6° offcut presents ∼65% higher threading dislocation density and high...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Springer US
2016
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| Online Access: | http://hdl.handle.net/1721.1/105856 https://orcid.org/0000-0002-1891-1959 |