Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design

Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.

Bibliographic Details
Main Author:	Radhakrishna, Ujwal
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2016
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/105951

Internet

http://hdl.handle.net/1721.1/105951