Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
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| פורמט: | Thesis |
| שפה: | eng |
| יצא לאור: |
Massachusetts Institute of Technology
2016
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| גישה מקוונת: | http://hdl.handle.net/1721.1/105951 |