Modeling gallium-nitride based high electron Mobility transistors : linking device physics to high voltage and high frequency circuit design
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 2016.
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Thesis |
| Language: | eng |
| Published: |
Massachusetts Institute of Technology
2016
|
| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/105951 |