Fluorinated benzalkylsilane molecular rectifiers
We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF[subscript 3], 3,5-CF[subscript 3], 3-F-4-CF[subscript 3], 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relat...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/107785 |
| _version_ | 1811092655172485120 |
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| author | Lamport, Zachary A. Broadnax, Angela D. Harrison, David Barth, Katrina J. Mendenhall, Lee Hamilton, Clayton T. Guthold, Martin Thonhauser, Timo Welker, Mark E. Jurchescu, Oana D. |
| author2 | Massachusetts Institute of Technology. Department of Chemistry |
| author_facet | Massachusetts Institute of Technology. Department of Chemistry Lamport, Zachary A. Broadnax, Angela D. Harrison, David Barth, Katrina J. Mendenhall, Lee Hamilton, Clayton T. Guthold, Martin Thonhauser, Timo Welker, Mark E. Jurchescu, Oana D. |
| author_sort | Lamport, Zachary A. |
| collection | MIT |
| description | We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF[subscript 3], 3,5-CF[subscript 3], 3-F-4-CF[subscript 3], 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length. |
| first_indexed | 2024-09-23T15:21:32Z |
| format | Article |
| id | mit-1721.1/107785 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:21:32Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1077852022-09-29T14:28:41Z Fluorinated benzalkylsilane molecular rectifiers Lamport, Zachary A. Broadnax, Angela D. Harrison, David Barth, Katrina J. Mendenhall, Lee Hamilton, Clayton T. Guthold, Martin Thonhauser, Timo Welker, Mark E. Jurchescu, Oana D. Massachusetts Institute of Technology. Department of Chemistry Thonhauser, Timo We report on the synthesis and electrical properties of nine new alkylated silane self-assembled monolayers (SAMs) – (EtO)3Si(CH2)nN = CHPhX where n = 3 or 11 and X = 4-CF[subscript 3], 3,5-CF[subscript 3], 3-F-4-CF[subscript 3], 4-F, or 2,3,4,5,6-F, and explore their rectification behavior in relation to their molecular structure. The electrical properties of the films were examined in a metal/insulator/metal configuration, with a highly-doped silicon bottom contact and a eutectic gallium-indium liquid metal (EGaIn) top contact. The junctions exhibit high yields (>90%), a remarkable resistance to bias stress, and current rectification ratios (R) between 20 and 200 depending on the structure, degree of order, and internal dipole of each molecule. We found that the rectification ratio correlates positively with the strength of the molecular dipole moment and it is reduced with increasing molecular length. National Science Foundation (U.S.) (Award ECCS 1254757) Wake Forest University (Pilot Research Grant) 2017-03-30T18:24:34Z 2017-03-30T18:24:34Z 2016-11 2016-09 Article http://purl.org/eprint/type/JournalArticle 2045-2322 http://hdl.handle.net/1721.1/107785 Lamport, Zachary A. et al. “Fluorinated Benzalkylsilane Molecular Rectifiers.” Scientific Reports 6.1 (2016): n. pag. en_US http://dx.doi.org/10.1038/srep38092 Scientific Reports Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Lamport, Zachary A. Broadnax, Angela D. Harrison, David Barth, Katrina J. Mendenhall, Lee Hamilton, Clayton T. Guthold, Martin Thonhauser, Timo Welker, Mark E. Jurchescu, Oana D. Fluorinated benzalkylsilane molecular rectifiers |
| title | Fluorinated benzalkylsilane molecular rectifiers |
| title_full | Fluorinated benzalkylsilane molecular rectifiers |
| title_fullStr | Fluorinated benzalkylsilane molecular rectifiers |
| title_full_unstemmed | Fluorinated benzalkylsilane molecular rectifiers |
| title_short | Fluorinated benzalkylsilane molecular rectifiers |
| title_sort | fluorinated benzalkylsilane molecular rectifiers |
| url | http://hdl.handle.net/1721.1/107785 |
| work_keys_str_mv | AT lamportzacharya fluorinatedbenzalkylsilanemolecularrectifiers AT broadnaxangelad fluorinatedbenzalkylsilanemolecularrectifiers AT harrisondavid fluorinatedbenzalkylsilanemolecularrectifiers AT barthkatrinaj fluorinatedbenzalkylsilanemolecularrectifiers AT mendenhalllee fluorinatedbenzalkylsilanemolecularrectifiers AT hamiltonclaytont fluorinatedbenzalkylsilanemolecularrectifiers AT gutholdmartin fluorinatedbenzalkylsilanemolecularrectifiers AT thonhausertimo fluorinatedbenzalkylsilanemolecularrectifiers AT welkermarke fluorinatedbenzalkylsilanemolecularrectifiers AT jurchescuoanad fluorinatedbenzalkylsilanemolecularrectifiers |