Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes

Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in th...

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Bibliographic Details
Main Authors: Hiu-Yung Wong, Hatem, Christopher, Lili Yu, Daniel, de Braga, Nelson Almeida, Mickevicius, Rimvydas Vidas, Zhang, Yuhao, Sun, Min, Lin, Yuxuan, Srivastava, Puneet, Azize, Mohamed, Piedra, Daniel, Sumitomo, Takamichi, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2017
Online Access:http://hdl.handle.net/1721.1/108296
https://orcid.org/0000-0002-2849-5653
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0003-0638-2620
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/108296
https://orcid.org/0000-0002-2849-5653
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0003-0638-2620
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0002-2190-563X

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