Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes
Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in th...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2017
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| Online Access: | http://hdl.handle.net/1721.1/108296 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0003-0638-2620 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
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| author | Hiu-Yung Wong Hatem, Christopher Lili Yu, Daniel de Braga, Nelson Almeida Mickevicius, Rimvydas Vidas Zhang, Yuhao Sun, Min Lin, Yuxuan Srivastava, Puneet Azize, Mohamed Piedra, Daniel Sumitomo, Takamichi Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Hiu-Yung Wong Hatem, Christopher Lili Yu, Daniel de Braga, Nelson Almeida Mickevicius, Rimvydas Vidas Zhang, Yuhao Sun, Min Lin, Yuxuan Srivastava, Puneet Azize, Mohamed Piedra, Daniel Sumitomo, Takamichi Palacios, Tomas |
| author_sort | Hiu-Yung Wong |
| collection | MIT |
| description | Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various leakage sources were investigated and separated, including leakage through the bulk drift region, passivation layer, etch sidewall, and transition layers. To suppress the leakage along the etch sidewall, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation. With this advanced edge termination technology, an OFF-state leakage current similar to Si, SiC, and GaN lateral devices has been achieved in the GaN-on-Si vertical diodes with over 300 V breakdown voltage and 2.9-MV/cm peak electric field. The origin of the remaining OFF-state leakage current can be explained by a combination of electron tunneling at the p-GaN/drift-layer interface and carrier hopping between dislocation traps. The low leakage current achieved in these devices demonstrates the great potential of the GaN-on-Si vertical device as a new low-cost candidate for high-performance power electronics. |
| first_indexed | 2024-09-23T09:08:11Z |
| format | Article |
| id | mit-1721.1/108296 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:08:11Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1082962022-09-30T13:40:39Z Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes Hiu-Yung Wong Hatem, Christopher Lili Yu, Daniel de Braga, Nelson Almeida Mickevicius, Rimvydas Vidas Zhang, Yuhao Sun, Min Lin, Yuxuan Srivastava, Puneet Azize, Mohamed Piedra, Daniel Sumitomo, Takamichi Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories Palacios, Tomas Zhang, Yuhao Sun, Min Lin, Yuxuan Srivastava, Puneet Azize, Mohamed Piedra, Daniel Sumitomo, Takamichi Palacios, Tomas Conventional GaN vertical devices, though promising for high-power applications, need expensive GaN substrates. Recently, low-cost GaN-on-Si vertical diodes have been demonstrated for the first time. This paper presents a systematic study to understand and control the OFF-state leakage current in the GaN-on-Si vertical diodes. Various leakage sources were investigated and separated, including leakage through the bulk drift region, passivation layer, etch sidewall, and transition layers. To suppress the leakage along the etch sidewall, an advanced edge termination technology has been developed by combining plasma treatment, tetramethylammonium hydroxide wet etching, and ion implantation. With this advanced edge termination technology, an OFF-state leakage current similar to Si, SiC, and GaN lateral devices has been achieved in the GaN-on-Si vertical diodes with over 300 V breakdown voltage and 2.9-MV/cm peak electric field. The origin of the remaining OFF-state leakage current can be explained by a combination of electron tunneling at the p-GaN/drift-layer interface and carrier hopping between dislocation traps. The low leakage current achieved in these devices demonstrates the great potential of the GaN-on-Si vertical device as a new low-cost candidate for high-performance power electronics. 2017-04-20T17:11:32Z 2017-04-20T17:11:32Z 2015-05 Article http://purl.org/eprint/type/JournalArticle 0018-9383 1557-9646 http://hdl.handle.net/1721.1/108296 Yuhao Zhang; Min Sun; Hiu-Yung Wong; Yuxuan Lin; Srivastava, Puneet; Hatem, Christopher; Azize, Mohamed et al. “Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes.” IEEE Transactions on Electron Devices 62, no. 7 (July 2015): 2155–2161. © 2015 Institute of Electrical and Electronics Engineers (IEEE) https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0003-0638-2620 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/TED.2015.2426711 IEEE Transactions on Electron Devices Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/ application/pdf Institute of Electrical and Electronics Engineers (IEEE) Prof. Palacios via Phoebe Ayers |
| spellingShingle | Hiu-Yung Wong Hatem, Christopher Lili Yu, Daniel de Braga, Nelson Almeida Mickevicius, Rimvydas Vidas Zhang, Yuhao Sun, Min Lin, Yuxuan Srivastava, Puneet Azize, Mohamed Piedra, Daniel Sumitomo, Takamichi Palacios, Tomas Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title | Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title_full | Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title_fullStr | Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title_full_unstemmed | Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title_short | Origin and Control of OFF-State Leakage Current in GaN-on-Si Vertical Diodes |
| title_sort | origin and control of off state leakage current in gan on si vertical diodes |
| url | http://hdl.handle.net/1721.1/108296 https://orcid.org/0000-0002-2849-5653 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0003-0638-2620 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0002-2190-563X |
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