Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in bot...

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Bibliographic Details
Main Authors: King, M. P., Dickerson, J. R., DasGupta, S., Marinella, M. J., Kaplar, R. J., Piedra, Daniel, Sun, Min, Palacios, Tomas
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers (IEEE) 2017
Online Access:http://hdl.handle.net/1721.1/108328
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0002-2190-563X

Internet

http://hdl.handle.net/1721.1/108328
https://orcid.org/0000-0002-8104-9097
https://orcid.org/0000-0003-4858-8264
https://orcid.org/0000-0002-2190-563X

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