Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks
Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in bot...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers (IEEE)
2017
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| Online Access: | http://hdl.handle.net/1721.1/108328 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2190-563X |
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| author | King, M. P. Dickerson, J. R. DasGupta, S. Marinella, M. J. Kaplar, R. J. Piedra, Daniel Sun, Min Palacios, Tomas |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science King, M. P. Dickerson, J. R. DasGupta, S. Marinella, M. J. Kaplar, R. J. Piedra, Daniel Sun, Min Palacios, Tomas |
| author_sort | King, M. P. |
| collection | MIT |
| description | Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery. |
| first_indexed | 2024-09-23T09:52:55Z |
| format | Article |
| id | mit-1721.1/108328 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T09:52:55Z |
| publishDate | 2017 |
| publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| record_format | dspace |
| spelling | mit-1721.1/1083282022-09-30T17:26:31Z Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks King, M. P. Dickerson, J. R. DasGupta, S. Marinella, M. J. Kaplar, R. J. Piedra, Daniel Sun, Min Palacios, Tomas Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Palacios, Tomas Piedra, Daniel Sun, Min Palacios, Tomas Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO₂ gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO₂ dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery. 2017-04-20T21:10:21Z 2017-04-20T21:10:21Z 2015-06 2015-04 Article http://purl.org/eprint/type/JournalArticle 1541-7026 1938-1891 http://hdl.handle.net/1721.1/108328 King, M. P.; Dickerson, J. R.; DasGupta, S.; Marinella, M. J.; Kaplar, R. J.; Piedra, D.; Sun, M. and Palacios, T. “Trapping Characteristics and Parametric Shifts in Lateral GaN HEMTs with SiO₂/AlGaN Gate Stacks.” 2015 IEEE International Reliability Physics Symposium (April 2015). © 2015 Institute of Electrical and Electronics Engineers (IEEE) https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2190-563X en_US http://dx.doi.org/10.1109/IRPS.2015.7112689 2015 IEEE International Reliability Physics Symposium application/pdf Institute of Electrical and Electronics Engineers (IEEE) |
| spellingShingle | King, M. P. Dickerson, J. R. DasGupta, S. Marinella, M. J. Kaplar, R. J. Piedra, Daniel Sun, Min Palacios, Tomas Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title | Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title_full | Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title_fullStr | Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title_full_unstemmed | Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title_short | Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO₂/AlGaN gate stacks |
| title_sort | trapping characteristics and parametric shifts in lateral gan hemts with sio₂ algan gate stacks |
| url | http://hdl.handle.net/1721.1/108328 https://orcid.org/0000-0002-8104-9097 https://orcid.org/0000-0003-4858-8264 https://orcid.org/0000-0002-2190-563X |
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