Edge dislocation slows down oxide ion diffusion in doped CeO2 by segregation of charged defects
Strained oxide thin films are of interest for accelerating oxide ion conduction in electrochemical devices. Although the effect of elastic strain has been uncovered theoretically, the effect of dislocations on the diffusion kinetics in such strained oxides is yet unclear. Here we investigate a 1/2&l...
| 主要な著者: | , , |
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| その他の著者: | |
| フォーマット: | 論文 |
| 言語: | en_US |
| 出版事項: |
Nature Publishing Group
2017
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| オンライン･アクセス: | http://hdl.handle.net/1721.1/108408 https://orcid.org/0000-0002-2688-5666 |