Gate-Activated Photoresponse in a Graphene p–n Junction

Gate-Activated Photoresponse in a Graphene p–n Junction

We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p–n junction is formed, allowing on–off control of photodetection. Photocurrents genera...

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Bibliographic Details
Main Authors: Lemme, Max C., Koppens, Frank H. L., Falk, Abram L., Rudner, Mark S., Park, Hongkun, Marcus, Charles M., Levitov, Leonid
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: American Chemical Society (ACS) 2017
Online Access:http://hdl.handle.net/1721.1/108463
https://orcid.org/0000-0002-4268-731X

Internet

http://hdl.handle.net/1721.1/108463
https://orcid.org/0000-0002-4268-731X

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