Gate-Activated Photoresponse in a Graphene p–n Junction
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p–n junction is formed, allowing on–off control of photodetection. Photocurrents genera...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Chemical Society (ACS)
2017
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| Online Access: | http://hdl.handle.net/1721.1/108463 https://orcid.org/0000-0002-4268-731X |