Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications

This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and insid...

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Bibliographic Details
Main Authors: Chou, Po-Chien, Chen, Szu-Hao, Hsieh, Ting-En, Cheng, Stone, Chang, Edward, del Alamo, Jesus A
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:en_US
Published: MDPI AG 2017
Online Access:http://hdl.handle.net/1721.1/109929

Internet

http://hdl.handle.net/1721.1/109929

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