Evaluation and Reliability Assessment of GaN-on-Si MIS-HEMT for Power Switching Applications
This paper reports an extensive analysis of the physical mechanisms responsible for the failure of GaN-based metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs). When stressed under high applied electric fields, the traps at the dielectric/III-N barrier interface and insid...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
MDPI AG
2017
|
| Online Access: | http://hdl.handle.net/1721.1/109929 |