Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation...

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Bibliographic Details
Main Authors: Hutchinson, David, Mathews, Jay, Sullivan, Joseph T., Recht, Daniel, Williams, James S., Warrender, Jeffrey M., Persans, Peter D., Aziz, Michael J., Mailoa, Jonathan P, Akey, Austin J, Simmons, Christine B, Sullivan, Joseph Timothy, Winkler, Mark Thomas, Buonassisi, Anthony
Other Authors: Massachusetts Institute of Technology. Department of Mechanical Engineering
Format: Article
Language:en_US
Published: Nature Publishing Group 2017
Online Access:http://hdl.handle.net/1721.1/110104
https://orcid.org/0000-0003-2239-6192
https://orcid.org/0000-0001-8345-4937

Internet

http://hdl.handle.net/1721.1/110104
https://orcid.org/0000-0003-2239-6192
https://orcid.org/0000-0001-8345-4937

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