Room-temperature sub-band gap optoelectronic response of hyperdoped silicon
Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation...
| Main Authors: | , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | en_US |
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Nature Publishing Group
2017
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| Online Access: | http://hdl.handle.net/1721.1/110104 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0001-8345-4937 |
| _version_ | 1811093362474745856 |
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| author | Hutchinson, David Mathews, Jay Sullivan, Joseph T. Recht, Daniel Williams, James S. Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Mailoa, Jonathan P Akey, Austin J Simmons, Christine B Sullivan, Joseph Timothy Winkler, Mark Thomas Buonassisi, Anthony |
| author2 | Massachusetts Institute of Technology. Department of Mechanical Engineering |
| author_facet | Massachusetts Institute of Technology. Department of Mechanical Engineering Hutchinson, David Mathews, Jay Sullivan, Joseph T. Recht, Daniel Williams, James S. Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Mailoa, Jonathan P Akey, Austin J Simmons, Christine B Sullivan, Joseph Timothy Winkler, Mark Thomas Buonassisi, Anthony |
| author_sort | Hutchinson, David |
| collection | MIT |
| description | Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 1020 cm−3 into a single-crystal surface layer ~150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature. |
| first_indexed | 2024-09-23T15:44:03Z |
| format | Article |
| id | mit-1721.1/110104 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T15:44:03Z |
| publishDate | 2017 |
| publisher | Nature Publishing Group |
| record_format | dspace |
| spelling | mit-1721.1/1101042022-10-02T03:44:44Z Room-temperature sub-band gap optoelectronic response of hyperdoped silicon Hutchinson, David Mathews, Jay Sullivan, Joseph T. Recht, Daniel Williams, James S. Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Mailoa, Jonathan P Akey, Austin J Simmons, Christine B Sullivan, Joseph Timothy Winkler, Mark Thomas Buonassisi, Anthony Massachusetts Institute of Technology. Department of Mechanical Engineering Mailoa, Jonathan P Akey, Austin J Simmons, Christine B Sullivan, Joseph Timothy Winkler, Mark Thomas Buonassisi, Anthony Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion. Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials. Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature. Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes. A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 1020 cm−3 into a single-crystal surface layer ~150 nm thin. We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration. This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature. National Science Foundation (U.S.). Energy, Power, and Adaptive Systems (Contract ECCS-1102050) National Science Foundation (U.S.) (EEC-1041895) Center for Clean Water and Clean Energy at MIT and KFUPM 2017-06-21T14:00:47Z 2017-06-21T14:00:47Z 2014-01 2013-09 Article http://purl.org/eprint/type/JournalArticle 2041-1723 http://hdl.handle.net/1721.1/110104 Mailoa, Jonathan P. et al. “Room-Temperature Sub-Band Gap Optoelectronic Response of Hyperdoped Silicon.” Nature Communications 5 (2014): n. pag. © 2017 Macmillan Publishers Limited https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0001-8345-4937 en_US http://dx.doi.org/10.1038/ncomms4011 Nature Communications Creative Commons Attribution 4.0 International License http://creativecommons.org/licenses/by/4.0/ application/pdf Nature Publishing Group Nature |
| spellingShingle | Hutchinson, David Mathews, Jay Sullivan, Joseph T. Recht, Daniel Williams, James S. Warrender, Jeffrey M. Persans, Peter D. Aziz, Michael J. Mailoa, Jonathan P Akey, Austin J Simmons, Christine B Sullivan, Joseph Timothy Winkler, Mark Thomas Buonassisi, Anthony Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title | Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title_full | Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title_fullStr | Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title_full_unstemmed | Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title_short | Room-temperature sub-band gap optoelectronic response of hyperdoped silicon |
| title_sort | room temperature sub band gap optoelectronic response of hyperdoped silicon |
| url | http://hdl.handle.net/1721.1/110104 https://orcid.org/0000-0003-2239-6192 https://orcid.org/0000-0001-8345-4937 |
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