Nanofabrication of arrays of silicon field emitters with vertical silicon nanowire current limiters and self-aligned gates
We developed a fabrication process for embedding a dense array (10⁸cm⁻²) of high-aspect-ratio silicon nanowires (200 nm diameter and 10 μm tall) in a dielectric matrix and then structured/exposed the tips of the nanowires to form self-aligned gate field emitter arrays using chemical mechanical polis...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
IOP Publishing
2017
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| Online Access: | http://hdl.handle.net/1721.1/110709 https://orcid.org/0000-0003-3946-2862 https://orcid.org/0000-0003-3001-9223 |